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  1 MRF9820T1 motorola rf device data    
 the rf small signal line  
    the MRF9820T1 is a high performance gaas agc amplifier suitable for use in low noise front end amplifier or downconverter applications. the device contains two enhancement mode mesfets connected in cascode to allow access to both gates for gain control or injection of lo signals. this device is well suited for low voltage, low current frontend applications such as paging, cellular, gsm, dect, and other portable wireless systems. ? low noise figure: 1.5 db @ 940 mhz, 1 ma ? built in esd protection ? does not require a negative supply voltage ? rf power gain 16 db @ 940 mhz, 1 ma ? high third order intercept point ? industry standard sot143 surface mount package ? order MRF9820T1 for tape and reel packaging. t1 suffix = 3,000 units per 8 mm, 7 inch reel. maximum ratings rating symbol value unit drainsource voltage v ds 6 vdc gate 1source voltage v g1s 4 vdc gate 2source voltage v g2s 4 vdc drain current e continuous i d i dss e total device dissipation @ t c = 75 c derate above 75 c p d 231 4.3 mw mw/ c storage temperature range t stg 55 to +150 c operating channel temperature t ch 150 c thermal characteristics rating symbol max unit thermal resistance, channel to case r q chc 325 c/w electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol value unit gate 1 leakage current (v ds = 2 v, v g1s = 0.425 v, v g2s = 1 v) i g1s 4 m a gate 2 leakage current (v ds = 2 v, v g1s = 0.5 v, v g2s = 0.425 v) i g2s 4 m a threshold voltage (v ds = 3 v, v g2s = 1 v, i d = 1 ma) v th 275 (min) 425 (max) mv gate 1tosource cutoff voltage (v ds = 2 v, v g2s = 1 v, i d = 200 m a) v g1s(off) 100 (min) 360 (max) mv gate 2tosource cutoff voltage (v ds = 2 v, v g1s = 0.5 v, i d = 200 m a) v g2s(off) 10 (min) 370 (max) mv forward transconductance (v ds = 2 v, v g2s = 1 v, i d = 1 ma) g m 9 (min) ms draintosource leakage current (v ds = 2 v, v g1s = 0 v, v g2s = 0 v) i ds(off) 2 (max) m a note caution mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by MRF9820T1/d   semiconductor technical data 
 case 318a05, style 11 (sot143) surface mount low noise enhancement mode gaas cascode ? motorola, inc. 1997
MRF9820T1 2 motorola rf device data performance characteristics (t c = 25 c unless otherwise noted) characteristic symbol value unit rf power gain (v ds = 3 v, v g2 = 1.7 v, i d = 1 ma, f = 940 mhz) g ps 14 (min) db noise figure (v ds = 3 v, v g2 = 1.7 v, i d = 1 ma, f = 940 mhz) nf 1.5 (typ) 2.0 (max) db input third order intercept point iip3 3 (typ) 8 (min) dbm source gate 2 drain gate 1 figure 1. electrical schematic of gaas agc amplifier
3 MRF9820T1 motorola rf device data typical characteristics , drain current (ma) i ds , drain current (ma) i ds 4 v ds , drainsource voltage (v) 0 2 2 1 135 0 3 5 4 8 v g1s , gate 1source voltage (v) 0 0.4 4 2 0.2 0.6 1.0 0 6 10 0.8 figure 2. drain current versus v ds ; stepping v g1s 8 v ds , drainsource voltage (v) 0 2 4 2 figure 3. drain current versus v g1s ; stepping v g2s 135 , drain current (ma) 0 6 10 4 8 v g2s , gate 2source voltage (v) 0 0.4 4 2 0.2 0.6 1.0 0 6 10 0.8 0.5 v 0.4 v 0.3 v 0.2 v v g1s = 0.6 v v g2s = 1.0 v t a = 25 c v ds = 2.0 v t a = 25 c 0.8 v 0.6 v 0.4 v 0.2 v v g2s = 1.0 v 0.8 v 0.6 v 0.4 v v g1s = 0.5 v t a = 25 c 0.2 v v g2s = 1.0 v v ds = 2.0 v t a = 25 c v g1s = 0.6 v 0.5 v 0.4 v 0.3 v 0.2 v i ds , drain current (ma) i ds figure 4. drain current versus v ds ; stepping v g2s figure 5. drain current versus v g2s ; stepping v g1s
MRF9820T1 4 motorola rf device data package dimensions case 318a05 issue r dim a min max min max inches 2.80 3.04 0.110 0.120 millimeters b 1.20 1.39 0.047 0.055 c 0.84 1.14 0.033 0.045 d 0.39 0.50 0.015 0.020 f 0.79 0.93 0.031 0.037 g 1.78 2.03 0.070 0.080 h 0.013 0.10 0.0005 0.004 j 0.08 0.15 0.003 0.006 k 0.46 0.60 0.018 0.024 l 0.445 0.60 0.0175 0.024 r 0.72 0.83 0.028 0.033 s 2.11 2.48 0.083 0.098 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. g s r c j a l f d b 1 34 2 h k style 11: pin 1. source 2. gate 1 3. gate 2 4. drain motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : nippon motorola ltd.: spd, strategic planning office, 4321, p.o. box 5405, denver, colorado 80217. 3036752140 or 18004412447 nishigotanda, shinagawaku, tokyo 141, japan. 81354878488 mfax ? : rmfax0@email.sps.mot.com touchtone 6 022446609 asia / pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, us & canada only 18007741848 51 ting kok road, tai po, n.t., hong kong. 85226629298 internet : http://motorola.com/sps MRF9820T1/d ?


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